Publication
Advanced Photonics Laboratory

Journal

Publication Journal
Lasing characteristics of InGaAs/InGaAsP multiple-quantum-well waveguide-type depleted optical thyristor with vertical window
Year
2005
Author
Woon-kyung Choi, Doo-Gun Kim, Young-Wan Choi, Seok Lee, DeokHa Woo, and S.-H. Kim
Journal
Applied Physics Letters
Status
국외전문학술지 (SCI)
Vol
86(2)
Page
021108-1 ~ 021108-3
File
2005-1 Lasing characteristics of InGaAsInGaAsP multiple-quantum-well waveguide-type depleted optical thyristor with vertical window.pdf (152.1K) 10회 다운로드 DATE : 2020-11-18 13:18:17
Abstract : This study demonstrates the lasing characteristics of InGaAs/InGaAsP multiple-quantum-well waveguide-type depleted optical thyristor using the vertical window. The measured switching voltage and current are 3.36 V and 10 mA, respectively. The lasing threshold current is 131 mA at 25 °C. The output peak wavelength is 1570 nm at a bias current of 1.22 Ith and there is no input signal. The vertically injected depleted optical thyristor shows very good isolation between input and output signals. © 2005 American Institute of Physics.