Publication
Advanced Photonics Laboratory

Journal

Publication Journal
Lasing characteristics of InGaAs/InGaAsP multiple-quantum-well optical thyristor operating at 1.561um
Year
2003
Author
D.G.Kim, H.H.Lee, W.K.Choi, Y.W.Choi, S.Lee, D.H.Woo, Y.T.Byun, J.H.Kim, S.H.Kim, Yoshiaki Nakano
Journal
Applied Physics Letters
Status
국외전문학술지 (SCI)
Vol
82(2)
Page
158-160
File
2003-1 Lasing characteristics of InGaAs InGaAsP multiple-quantum-well optical thyristor operating at 1.561um.pdf (89.0K) 9회 다운로드 DATE : 2020-11-17 16:32:31
Abstract: We present a demonstration of a waveguide-type depleted optical thyristor laser diode with InGaAs/InGaAsP multiple-quantum-well structure. The measured switching voltage and current are 4.63 V and 10 mA, respectively. The holding voltage and current are, respectively, 0.59 V and 20 mA. The lasing threshold currents at 25 °C and 10 °C are 111 mA and 72.5 mA, respectively. The lasing wavelength is centered at 1.561 mm at a bias current equal to 1.41 times threshold.

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